@article{
ref0,
   Author = {Author, An and Author, Yet Another and Collaborator, Some and Boss, Their},
   Title = {If the paper talks about elements like {Si} and {Rb} you need braces around them to maintain the case},
   Journal = {Journal of Smartie Pants},
   Volume = {79},
   Number = {2},
   Pages = {123},
 Year = {2010} }



@phdthesis{
2006-lay-thesis,
   Author = {Lay, Matthew D. H.},
   Title = {Defect Studies of Ion Implanted Silicon \& Silicon-Dioxide For Semiconductor Devices},
   School = {The University of Melbourne},
   Type = {{PhD} Thesis},
   Abstract = {We have studied the introduction of defects in silicon wafers with low dose channelling ion implantation. Implants
of 600~keV phosphorus into Cz-grown silicon to fluences between 2$\times$10$^8-$1$\times$10$^9$~\pcms were
performed. Implants were performed in the channelling orientation and at a tilt angle equivalent to a random
orientation. Samples were then examined with Deep-Level Transient Spectroscopy (DLTS) and three defects were
identified in samples: VO, V$_2^{2-}$ and V$_2^-$/VP. No variation in point-defect species was observed as
implantation angle was varied in contrast with work published by others. Defect concentrations were found to
increase linearly with implant fluence over the range studied, channelling however leads to a slower increase as
fluence is increased. The V$_2^-$/VP defect depth profile was also obtained with DLTS. A significant amount of
surface enhanced annihilation was proposed to account for the deviation of measured profiles from Crystal-TRIM
simulations. Simulations however, did show a good fit to the measured profiles deeper into the sample. This
suggests the influence of surface enhanced annihilation extends up to 1~\micron into the sample. Only 1.5\% of
vacancies predicted to be produced could be accounted for in measurements and this was less than the expected
yield of 4-10\% based on the literature.

The subsequent production of secondary extended defects upon annealing in medium dose implanted samples as a
function of implantation angle was also examined. Samples were implanted with 75~keV phosphorus ions to fluences
in the range 1\eft$-$4.5\eftpcms and annealed at 750\degc for 10$-$15 minutes. It was found that channelling does
not affect the formation threshold but does affect the size and population of defects formed. The threshold
fluence at which extended defects would form was found to be reduced with an increasing annealing time. The effect
of channelling on the formation of short rod-like defects is also presented for the first time.

Finally, the effect of localised medium dose low energy implantation on the surface potential of thin thermal
oxides on silicon was studied with Kelvin-probe Force Microscopy (KFM). Samples with either 5, 15 or 50~nm oxides
were implanted with 15~keV ions of either $^{10}$B, $^{28}$Si, $^{29}$Si or $^{31}$P. It was shown that KFM was
clearly able to laterally resolve implanted areas and that implantation resulted in a either an increase or
decrease in the surface potential. Results suggested that oxide and silicon substrate damage manifested itself as
a reduced surface potential as a result of defects with a negative charge state. It was unclear however if the
increased surface potential was due to interface states or carbon-stitching on the surface. The magnitude of the
change in surface potential scaled with implanted ion mass and fluence. However, as fluence was increased beyond
1$\times$10$^{13}$~\pcms the increase in surface potential began to reduce.},
 Year = {2006} }