The ultimate IBIC: SIDLTS
The electrical charactersiation technique called Deep Level Transient Spectroscopy is a well established ultra-sensitive method for measuring defects (“traps”) in semiconductors
The charge transient introduced by Scanning Ion impact may also be used to measure the trap filling and emptying rates (SIDLTS)
Rates have several time constants depending on the nature of the traps and the temperature
Requires computer controlled temperature stage
(See poster by Jamie Laird et al.)