Sources of recombination in IBIC: Energy level view
(1) Non-radiative recombination (common)
(2) Radiative recombination (rare)
- (1) or (2) mean no IBIC signal
Extra levels come from contaminants:
- C, O, Au contribute deep levels in Si
- Ion beam implantation around 109 B/cm2 creates shallow levels in Si
- B, Sb, P contribute shallow levels in Si
Transition probability is enhanced by level depth, deep levels are generally highly undesirable