To investigate the
material properties of silicon utilised in making the Kane Quantum
Computer and the effect that each processing step has on these
properties.
Ion implantation
is one of the principle processing techniques under investigation
for forming an ordered array of phosphorus atoms. This technique
introduces defect centres in silicon which act as charge traps.
Charge traps are expected to be detrimental to the operation
of the device. These defect centres, and their dependence on
ion implantation and thermal annealing conditions, are being
quantified using Deep Level Transient Spectroscopy (DLTS).
This study is expected
to aid in identifying the range of processing conditions suitable
for building a quantum computer. Electron paramagnetic resonance
studies of phosphorus implanted silicon allow spin-related defects
to be identified and the local environment of the phosphorus
atoms to be probed. This study is designed to ensure that the
local environment of the phosphorus atoms is suitable for the
spin operations of the quantum computer.
Research Topics:
Characterisation
of charge traps in silicon introduced via ion implantation.
Electron paramagnetic
resonance studies of phosphorus in ion implanted silicon.
